? by semikron 000131 b 16 ? 53 absolute maximum ratings symbol conditions 1) values units inverter & chopper v ces v ges i c i cm i f = ?i c i fm = ?i cm t heatsink = 25 / 80 c t p < 1 ms; t heatsink = 25 / 80 c t heatsink = 25 / 80 c t p < 1 ms; t heatsink = 25 / 80 c 1200 20 23 / 15 46 / 30 24 / 17 48 / 34 v v a a a a bridge rectifier v rrm i d i fsm i 2 t t heatsink = 80 c t p = 10 ms; sin. 180 , t j = 25 c t p = 10 ms; sin. 180 , t j = 25 c 1500 25 700 2400 v a a a 2 s t j t stg v isol ac, 1 min. ? 40 . . . + 150 ? 40 . . . + 125 2500 c c v characteristics symbol conditions 1) min. typ. max. units igbt - inverter & chopper v cesat t d(on) t r t d(off) t f e on + e off c ies r thjh i c = 15 a t j = 25 (125) c v cc = 600 v; v ge = 15 v i c = 15 a; t j = 125 c r gon = r goff = 82 ? inductive load v ce = 25 v; v ge = 0 v, 1 mhz per igbt ? ? ? ? ? ? ? ? 2,5(3,1) 55 45 400 70 4,0 1,0 ? 3,0(3,7) 110 90 600 100 ? ? 1,4 v ns ns ns ns mj nf k/w diode 2) - inverter & chopper v f = v ec v to r t i rrm q rr e off r thjh i f = 15 a t j = 25 (125) c t j = 125 c t j = 125 c i f = 15 a, v r = ? 600 v di f /dt = ? 400 a/ s v ge = 0 v, t j = 125 c per diode ? ? ? ? ? ? ? 2,0(1,8) 1,0 53 16 2,7 0,6 ? 2,5(2,3) 1,2 73 ? ? ? 1,7 v v m ? a c mj k/w diode - rectifier v f r thjh i f = 35 a, t j = 25 c per diode ? ? 1,2 ? ? 1,6 v k/w temperature sensor r ts t = 25 / 100 c 1000 / 1670 ? shunts (skiip 22 nab 12 i) r cs(dc) r cs(ac) 5 % 4) 1 % 16,5 10 m ? m ? mechanical data m 1 case case to heatsink, si units mechanical outline see page b 16 ? 8 2? m2 2,5 nm skiip 22 nab 12 - skiip 22 nab 12 i miniskiip 2 semikron integrated intelligent power skiip 22 nab 12 skiip 22 nab 12 i 3) 3-phase bridge rectifier + braking chopper + 3-phase bridge inverter case m2 ul recognized file no. e63532 specification of shunts and temperature sensor see part a common characteristics see page b 16 ? 4 1) t heatsink = 25 c, unless otherwise specified 2) cal = controlled axial lifetime technology (soft and fast recovery) 3) with integrated dc and/or ac shunts 4) accuracy of pure shunt, please note that for dc shunt no separate sensing contact is used.
b 16 ? 54 000131 ? by semikron 22na1204.xls 0 1 2 3 4 5 0 50 100 150 r g ? e mws eon eoff 22na1203.xls 0 1 2 3 4 5 0102030 i c a e mws eon eoff fig. 3 turn-on /-off energy = f (i c ) fig. 4 turn-on /-off energy = f (r g ) t j = 125 c v ce = 600 v v ge = 15 v i c = 15 a t j = 125 c v ce = 600 v v ge = 15 v r g = 52 ? i cpuls = 15 a v ge = 0 v f = 1 mhz fig. 1 typ. output characteristic, t p = 80 s; 25 c fig. 2 typ. output characteristic, t p = 80 s; 125 c fig. 5 typ. gate charge characteristic fig. 6 typ. capacitances vs. v ce
b 16 C 4 0698 ? by semikron t j = 150 c v ge = 15 v t sc = 10 m s l ext < 25 nh t j = 150 c v ge = 15 v t j = 150 c v ge = 3 15 v fig. 9 turn-off safe operating area (rbsoa) of the igbt fig. 10 safe operating area at short circuit of the igbt fig. 7 rated current of the igbt i cop / i c = f (t h ) 0 0.2 0.4 0.6 0.8 1.0 1.2 0 25 50 75 100 125 150 i cop /i c mini1207 t h [c] 0 0,5 1 1,5 2 2,5 0 500 1000 1500 i cpuls /i c mini1209 v ce [v] 0 2 4 6 8 10 12 0 500 1000 1500 note: *allowed numbers of short circuit:<1000 *time between short circuit:>1s i csc /i cn mini1210 v ce [v] fig. 11 typ. freewheeling diode forward characteristic fig. 12 forward characteristic of the input bridge diode miniskiip 1200 v
miniskiip 2 skiip 20 nab 06 ... skiip 21 nab 06 ... skiip 20 nab 12 ... skiip 22 nab 12 ... circuit case m2 layout and connections for the customers printed circuit board note: the shunts are available only by option i -dc/a isw 0w isv 0v 0u isu i+ b -t l3 l1 l2 +rect -dc -rect g1 u v w +t +dc g3 g5 g2 g6 g4 gb +b -b hauptanschlu? power connector control pin steueranschlu?
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